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AO7414 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO7414 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V, in the small SOT-323 footprint. It can be used for a wide variety of applications, including load switching, low current inverters and low current DC-DC converters. AO7414 and AO7414L are electrically identical. -RoHS Compliant -AO7414L is Halogen Free
Features
VDS (V) = 20V ID = 2 A (VGS = 4.5V) RDS(ON) < 62m (VGS = 4.5V) RDS(ON) < 70m (VGS = 2.5V) RDS(ON) < 85m (VGS = 1.8V)
SC-70 (SOT-323) Top View G D S G
D
S
Absolute Maximum Ratings TA=25C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A
B
Maximum 20 8 2 1.5 25 0.35 0.22 -55 to 150
Units V V A
TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG
W C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
Symbol t 10s Steady-State Steady-State RJA RJL
Typ 300 340 280
Max 360 425 320
Units C/W C/W C/W
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AO7414
Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=20V, VGS=0V TJ=55C VDS=0V, VGS=8V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=4.5V, ID=2A RDS(ON) Static Drain-Source On-Resistance TJ=125C VGS=2.5V, ID=1.8A VGS=1.8V, ID=1A gFS VSD IS Forward Transconductance VDS=5V, ID=2A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current 0.5 25 50 70 56 66 15 0.7 1 0.35 260 VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz 48 27 3 2.9 VGS=4.5V, VDS=10V, ID=2A 0.4 0.6 2.5 VGS=4.5V, VDS=10V, RL=5, RGEN=6 IF=2A, dI/dt=100A/s 3.2 21 3 14 3.4 19 4.5 3.8 320 62 90 70 85 S V A pF pF pF nC nC nC ns ns ns ns ns nC 0.68 Min 20 1 5 100 1 Typ Max Units V A nA V A m m
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time
Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=2A, dI/dt=100A/s
A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev1: March 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AO7414
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25 4.5V 20 2.5V 15 ID (A) 2V 10 20 18 16 14 12 ID(A) 10 8 VGS=1.5V 5 6 4 2 0 0 0.5 1 1.5 2 2.5 3 VGS(Volts) Figure 2: Transfer Characteristics 1.60E+00 120 Normalized On-Resistance
VGS=2.5V ID=1.7A
VGS=4.5V, ID=1.8A VGS=2.5V, ID=1.7A VGS=1.8V, ID=1A
125C
25C
0 0 1 2 3
VGS=1.5V, ID=1A
4 5
VDS (Volts) Fig 1: On-Region Characteristics
100 RDS(ON) (m)
1.40E+00
VGS=1.8V ID=1A
80
VGS=1.8V VGS=2.5V VGS=4.5V 0 1 2 3 4 5 6 7 8 9 10
1.20E+00
VGS=4.5V ID=1.8A
60
1.00E+00
40
ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 120
8.00E-01 -50 -25
Temperature (C) Figure 4: On-Resistance vs. Junction Temperature
0
25
50
75 100 125 150 175
1.0E+01 1.0E+00
100 RDS(ON) (m)
ID=2A IS (A)
1.0E-01 125C 1.0E-02 25C 1.0E-03
80 125C 60
25C
1.0E-04 1.0E-05
40 1 2 3 4 5 6 7 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts) Figure 6: Body-Diode Characteristics
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AO7414
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5 V =10V VDSDS=10V ID=2.2A ID=3.5A Capacitance (pF) 400 350 300 250 200 150 100 Coss 50 Crss 0 3.5 0 10 15 VDS (Volts) Figure 8: Capacitance Characteristics 5 20 Ciss
4
VGS (Volts)
3
2
VGS=4.5V, ID=1.8A VGS=2.5V, ID=1.7A VGS=1.8V, ID=1A VGS=1.5V, ID=1A
0 0.5 1.5 2 2.5 3 Qg (nC) Figure 7: Gate-Charge Characteristics 1
1
0
100.0 TJ(Max)=150C TA=25C 10us 10.0 RDS(ON) limited 100us 1.0 1ms DC 0.1 0.1 1 10s 1s 10 100ms VDS (Volts) 100 10ms
1000 TJ(Max)=150C TA=25C 100
Power (W)
ID (Amps)
10
1
0.1 0 0 0 0.01 0.1 1 10 100 1000
Figure 9: Maximum Forward Biased Safe Operating Area (Note E)
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZJA Normalized Transient Thermal Resistance
1
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=250C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1 PD 0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Ton
T
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha Omega Semiconductor, Ltd.
www.aosmd.com

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